型号 SI7748DP-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH 30V 50A PPAK 8SOIC
SI7748DP-T1-GE3 PDF
代理商 SI7748DP-T1-GE3
产品目录绘图 DP-T1-(G)E3 Series 8-SOIC
标准包装 1
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 50A
开态Rds(最大)@ Id, Vgs @ 25° C 4.8 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大) 2.7V @ 1mA
闸电荷(Qg) @ Vgs 92nC @ 10V
输入电容 (Ciss) @ Vds 3770pF @ 15V
功率 - 最大 56W
安装类型 表面贴装
封装/外壳 PowerPAK? SO-8
供应商设备封装 PowerPAK? SO-8
包装 剪切带 (CT)
产品目录页面 1662 (CN2011-ZH PDF)
其它名称 SI7748DP-T1-GE3CT
同类型PDF
SI7748DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A PPAK 8SOIC
SI7758DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK 8SOIC
SI7758DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK 8SOIC
SI7758DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 60A PPAK 8SOIC
SI7772DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI7772DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI7772DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI7774DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC
SI7774DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC
SI7774DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC
SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
SI7784DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35A PPAK 8SOIC
SI7788DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A PPAK 8SOIC
SI7788DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A PPAK 8SOIC
SI7788DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A PPAK 8SOIC
SI7790DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 50A PPAK 8SOIC
SI7790DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 50A PPAK 8SOIC
SI7790DP-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 50A PPAK 8SOIC
SI7802DN-T1-E3 Vishay Siliconix MOSFET N-CH 250V 1.24A 1212-8